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Chinese Journal of Applied Ecology ›› 2021, Vol. 32 ›› Issue (3): 1096-1104.doi: 10.13287/j.1001-9332.202103.005

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Regulating effects of silicon on Cd-accumulation and stress-resistant responding in rice seedling

PAN Bo-gui1,2,3, MO Han-qian1,2,3, WANG Wei4, CAI Kun-zheng1,2,3, TIAN Ji-hui1,2,3, CAI Yi-xia1,2,3*   

  1. 1College of Natural Resources and Environment, South China Agricultural University, Guangzhou 510642, China;
    2Key Laboratory of Tropical Agricultural Environment in South China, Ministry of Agriculture, Guangzhou 510642, China;
    3Guangdong Provincial Key Laboratory of Eco-Circular Agriculture, Guangzhou 510642, China;
    4College of Agriculture, South China Agricultural University, Guangzhou 510642, China
  • Received:2020-09-26 Accepted:2020-12-28 Online:2021-03-15 Published:2021-09-15
  • Contact: * E-mail: caiyixia@scau.edu.cn
  • Supported by:
    Science and Technology Planning Program of Guangdong Pro-vince (2013B020310010)

Abstract: Silicon (Si) application could significantly alleviate the toxic effects of cadmium (Cd) on the growth and development of rice. Here, we examined the regulatory effects of Si on Cd accumulation and stress response in rice seedlings through a hydroponic root separation test. The results showed that the biomass of rice seedlings decreased significantly under Cd stress, while the addition of Si could alleviate such negative effect. The uptake, transfer, and accumulation of Cd in rice seedling were significantly affected by Si addition under Cd stress. Si application under the unilateral Cd stress (Si-Cd+Si, Si-Cd) increased Cd-retention coefficient of root by 83.3%-83.6%, which restricted the transfer of Cd from root to aboveground. However, the treatment with Si added to the non-stressed side (Si-Cd) elevated the uptake and accumulation of Cd in rice seedling, with the accumulation in root being increased by 48.2% when compared to the treatment under the unilateral Cd stress without the addition of Si (CK-Cd). The treatment with Si added in two sides (Si-Cd+Si) decreased the uptake of Cd both in root and aboveground parts by 36.7% and 54.9%, respectively. The addition of Si under bilateral Cd stress (Cd-Cd+Si) significantly reduced the Cd uptake of both the root and aboveground parts by 57.8% and 46.5%, respectively, compared to the treatment of bilateral Cd stress (Cd-Cd). Higher Si concentration in rice seedling was found under the Cd stress. More Si was accumulated in rice seedling to resist the Cd stress when Si was added. The addition of Si affected the absorption of other metal elements in rice seedlings, including calcium (Ca), magnesium (Mg) and manganese (Mn). The concentrations of Ca and Mg in root and aboveground parts were significantly increased by Si addition under bilateral Cd-stress (Cd-Cd+Si), but Mn concentration was changed with the stress degree of Cd. The activities of superoxide dismutase (SOD) and peroxidase (POD) in root were affected by Si under Cd stress, especially for the Si-Cd treatment. The activity of POD in the root of the Cd-stress side and that of SOD in non-stress side were significantly increased, which benefit to scavenging the free radicals induced by Cd stress. In conclusion, Si could regulate the growth of rice seedlings, the uptake of elements such as Cd and Si, and the antioxidant reaction of the root system under the Cd stress. High Si concentration in plant is conducive to enhancing Cd tolerance.

Key words: rice, silicon, cadmium, Cd tolerance